Dependence of the noise parameters of the GaAs MESFET on technology, parasitic components and bias conditions in the frequency range up to 12 GHz
Abstract
- Publication:
-
7th European Microwave Conference
- Pub Date:
- 1978
- Bibcode:
- 1978eumw.conf...85T
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Metal Surfaces;
- Microwave Circuits;
- Noise Spectra;
- Noise Temperature;
- Background Noise;
- Electromagnetic Noise Measurement;
- Epitaxy;
- Schottky Diodes;
- Superhigh Frequencies;
- Electronics and Electrical Engineering