Optoelectronics. Part A: Technology of optoelectronic emitters
Abstract
A survey of electro-optical devices is presented. Technology and fabrication advances are reported. The developments of various LEDs and IREDs are described. IR diodes (lambda = 930 nm), fast IR diodes (100 MHz), IR diodes made of GaAlAs, red emitting diodes (GaAsP, lambda = 660 nm), and yellow and green emitting diodes (GaP, lambda = 560 nm; GaAsP, lambda = 590 nm) are highlighted. Performance tests and manufacturing techniques are described.
- Publication:
-
Final Report AEG-Telefunken
- Pub Date:
- December 1978
- Bibcode:
- 1978aegt.reptR....H
- Keywords:
-
- Electro-Optics;
- Light Emitting Diodes;
- Technology Assessment;
- Fabrication;
- Gallium Compounds;
- Gallium Phosphides;
- Infrared Radiation;
- Service Life;
- Thermal Degradation;
- Electronics and Electrical Engineering