Effect of temperature on Baritt diode large signal performance
Abstract
C band silicon devices were used to measure the effects of temperature on pnp Baritt diodes placed in a temperature-controlled box. It was found that the Baritt-diode large-signal negative conductance decreases and capacitance increases with increasing diode temperature. For medium bias current levels, the output power of a fix-tuned oscillator changes by less than 3 dB over the temperature range of -40 to 60 C. Greater power drops which occur at higher bias current levels are due to an impedance mismatch of the diode and microwave circuit.
- Publication:
-
Solid State Electronics
- Pub Date:
- September 1978
- DOI:
- 10.1016/0038-1101(78)90360-X
- Bibcode:
- 1978SSEle..21.1179K
- Keywords:
-
- Junction Diodes;
- Microwave Oscillators;
- Negative Conductance;
- P-N-P Junctions;
- Signal Analysis;
- Temperature Effects;
- Ambient Temperature;
- Electric Power;
- Frequency Response;
- Performance Prediction;
- Transit Time;
- Electronics and Electrical Engineering