Sulphur doped silicon IR detectors
Abstract
Experimental data on the electrical transport properties and photoconductive detector performance of sulphur doped silicon as a function of temperature are presented. Analysis of the data shows that the detector performance is determined by a donor level at 0.19 eV from the conduction band edge with an electron capture cross section of 2 × 10 -13 cm 2 and a peak photoionization cross section of 1 × 10 -16 cm 2. Photoconductivity has been observed at 95 K which may be associated with a centre 0.37 eV below the conduction band.
- Publication:
-
Solid State Electronics
- Pub Date:
- February 1978
- DOI:
- 10.1016/0038-1101(78)90276-9
- Bibcode:
- 1978SSEle..21..443M
- Keywords:
-
- Doped Crystals;
- Infrared Detectors;
- Photoconductivity;
- Silicon;
- Sulfur;
- Temperature Effects;
- Conduction Bands;
- Electron Capture;
- Hall Effect;
- Ionization Cross Sections;
- Photoionization;
- Electronics and Electrical Engineering