A TIN-119 Mössbauer and electrical conductivity study of the system Sn xGe 1- xSe (0 ⩽ x ⩽ 1)

¹¹⁹Sn Mössbauer parameters and electrical conductivity data for phases in the system Sn _xGe _{1- x}Se (0 ⩽ x ⩽ 1) are reported. The Mössbauer data for the material Sn _0.8Ge _0.2Se show that the electron distribution around the Sn at this composition is anomalous. There is, however, little indication of the presence of such an anomaly in the electrical conductivity and Hall Effect data. The implications of these observations are discussed.