Noise measurements in electron-beam-evaporated amorphous silicon thin films
Abstract
Electrical measurements, including current-voltage characteristics, dc and ac conductivities, and excess current noise spectral densities as a function of temperature were performed on a number of amorphous silicon films, as a means of probing the density-of-states (DOS) function in the mobility gap of this material. A significant result of this research was the first reported observation in amorphous silicon of a temperature dependence of the exponent alpha in amorphous silicon as a function of the film temperature. Alpha varied from 1 to 2 and back to 1 as the film temperature was raised above room temperature. Alpha increased to 2 in the range of 150-200 C and at higher temperatures, alpha dropped back toward unity. This behavior was qualitatively interpreted as indicating the absence of a large peak in the DOS near epsilon sub F.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- December 1978
- Bibcode:
- 1978PhDT.......107K
- Keywords:
-
- Amorphous Silicon;
- Electrical Measurement;
- Electromagnetic Noise;
- Electron Beams;
- Evaporation;
- Silicon Films;
- Temperature Effects;
- Amorphous Materials;
- Critical Temperature;
- Density (Number/Volume);
- Thin Films;
- Electronics and Electrical Engineering