VLSI processing, radiation, and hardening
Abstract
Process-induced radiation damage to silicon dioxide films is expected to be commonplace for VLSI circuit fabrication. This might be expected to be most serious for the production of radiation-hardened VLSI. In this paper, the oxide damage due to ion processing is reviewed and the radiation levels associated with advanced lithographic techniques are estimated. Implications for radiation-hardened VLSI circuits are considered.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1978
- DOI:
- 10.1109/TNS.1978.4329555
- Bibcode:
- 1978ITNS...25.1469G
- Keywords:
-
- Integrated Circuits;
- Large Scale Integration;
- Oxide Films;
- Radiation Damage;
- Radiation Hardening;
- Silicon Dioxide;
- Chips (Electronics);
- Ion Implantation;
- Electronics and Electrical Engineering