GaAs-GaAlAs heterostructure lasers on semi-insulating substrates
Abstract
A description is presented of the fabrication of GaAs-GaAlAs heterostructure lasers on semiinsulating substrates. Low-threshold, stable, single-mode lasing operation was achieved. The lasers can be easily integrated with other electronic devices on a single chip of GaAs. The integration of a two-terminal Gunn device with a crowding-effect laser (CEL) is demonstrated. Direct current modulation of the light output (underpulsed mode) has been achieved with frequencies up to 1 GHz. Liquid-phase epitaxy growth and selective Zn diffusion are used in the fabrication of laterally diffused junction lasers. The characteristics of a CEL are investigated, taking into account the distribution of the current which flows along the epi-layer, the current density which flows across the p-n junction, and the light intensity as a function of the driving current.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1978
- Bibcode:
- 1978ITED...25.1250L
- Keywords:
-
- Aluminum Gallium Arsenides;
- Gallium Arsenide Lasers;
- Heterojunction Devices;
- Laser Modes;
- Substrates;
- Current Density;
- Epitaxy;
- Gunn Diodes;
- Integrated Optics;
- Lasing;
- Light Modulation;
- Luminous Intensity;
- Systems Stability;
- Lasers and Masers