Interface states and memory decay in MNOS capacitors
Abstract
A method for measuring the density and energy distribution of interface states at the silicon-silicon dioxide interface in MNOS capacitors is described. Application of this method to capacitors fabricated on n-type substrates obtains a logarithmic dependence of the decay rate for stored holes on the interface state density generated during write-erase cycling. The slope of this relationship is strongly dependent on sample preparation. No dependence of the decay rate of electrons on interface state density was observed.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- August 1978
- DOI:
- 10.1109/T-ED.1978.19220
- Bibcode:
- 1978ITED...25.1037S
- Keywords:
-
- Capacitors;
- Computer Storage Devices;
- Metal-Nitride-Oxide-Silicon;
- Silicon Dioxide;
- Solid-Solid Interfaces;
- Decay Rates;
- Density Distribution;
- Differential Equations;
- Energy Distribution;
- Electronics and Electrical Engineering