Short-channel C-MOS/SOS technology
Abstract
Design, fabrication, and characterization of Si-gate short-channel C-MOS/SOS devices with channel length ranging from 1 to 3 microns are presented. Basic device parameters and their interrelations are discussed and illustrated in detail. Extremely-high-speed and low-power capability has been demonstrated for short-channel devices operating from a 5-V supply voltage. The process reproducibility and circuit performance point to the suitability of short-channel C-MOS/SOS technology for VLSI applications.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- August 1978
- DOI:
- 10.1109/T-ED.1978.19212
- Bibcode:
- 1978ITED...25..989Y
- Keywords:
-
- Cmos;
- Large Scale Integration;
- Network Analysis;
- Sos (Semiconductors);
- Doped Crystals;
- Electrical Resistance;
- Fabrication;
- Gates (Circuits);
- Leakage;
- Radiation Effects;
- Threshold Currents;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering