On the exitation dependent decay of photoconductivity in laser controlled solid state switches
Abstract
An investigation is conducted concerning the recombination and diffusion mechanisms in laser-excited semiconductor regions of solid-state switches. The decay of photoconductivity is quantitatively studied, taking into consideration the various laser systems which are usually employed for controlling the switch. Attention is given to extremely high excitation levels, which can be obtained with the aid of megawatt pulses in the ps range, and to relatively low excitation levels, which can be produced by means of a 40-W laser diode. A time constant related to a photoconductivity with nearly exponential decay characteristics is introduced for an estimation of the maximum switching sequence frequency. For highly degenerate plasmas, the constant is determined on the basis of the decay curve observed in the case of Auger recombination. The calculation of the time constant for a weakly excited plasma is also considered, taking into account a determination of the decay curve on the basis of linear recombination and carrier diffusion.
- Publication:
-
Frequenz
- Pub Date:
- February 1978
- DOI:
- 10.1515/FREQ.1978.32.2.57
- Bibcode:
- 1978Freq...32...57P
- Keywords:
-
- Decay Rates;
- Microwave Switching;
- Photoconductivity;
- Pulsed Lasers;
- Semiconductor Devices;
- Switching Circuits;
- Auger Effect;
- Degenerate Matter;
- Exponential Functions;
- Gallium Arsenide Lasers;
- Laser Applications;
- Off-On Control;
- Time Constant;
- Electronics and Electrical Engineering