GaAs M.E.S.F.E.T. technology and characteristics for optical communication systems
Abstract
For pulse regeneration applications GaAs MESFETs with low pinch-off voltages are desirable. The technology and the dependence of the input/output pulse width ratio on the bias voltage are described. The pulse behavior of a two-stage sharpener is shown, and the block diagram of an optical repeater station is proposed.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1978
- DOI:
- 10.1049/el:19780185
- Bibcode:
- 1978ElL....14..272D
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Metal Surfaces;
- Optical Communication;
- Pulse Generators;
- Repeaters;
- Cascade Control;
- Pulse Duration;
- Schottky Diodes;
- Systems Engineering;
- Time Response;
- Waveforms;
- Electronics and Electrical Engineering