Large signal GaAs M.E.S.F.E.T. model and distortion analysis
Abstract
A simple large signal model, derived from small signal measurements over a range of bias points, is presented for a 2 micron gate length GaAs MESFET. Its accuracy is verified by comparing model-predicted second harmonic distortion via time domain and Volterra analyses, with measurements to input frequencies of 4.5 GHz.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1978
- DOI:
- 10.1049/el:19780122
- Bibcode:
- 1978ElL....14..183M
- Keywords:
-
- Equivalent Circuits;
- Field Effect Transistors;
- Gallium Arsenides;
- Schottky Diodes;
- Signal Distortion;
- Harmonic Analysis;
- Metal Surfaces;
- Performance Prediction;
- Signal Measurement;
- Time Response;
- Electronics and Electrical Engineering