Photoluminescence topographic observation of defects in silicon crystals
Abstract
A simple rapid nondestructive method of evaluating defects in silicon crystals is developed. This method is basically an observation of photoluminescence (PL) pattern or PL topography. The correlation between the PL topograph and the defects are examined by preferential etching. Stacking faults and dislocations which are known to adversely affect many devices are found to be observed as dark spots in the PL topograph.
- Publication:
-
Applied Physics Letters
- Pub Date:
- September 1978
- DOI:
- 10.1063/1.90439
- Bibcode:
- 1978ApPhL..33..545N
- Keywords:
-
- Crystal Defects;
- Laser Materials;
- Nondestructive Tests;
- Photoluminescence;
- Silicon;
- Stacking Fault Energy;
- Crystal Dislocations;
- Large Scale Integration;
- Semiconductor Lasers;
- Topography;
- Wafers;
- Solid-State Physics;
- 78.55.Ds;
- 61.70.Jc;
- 61.70.Ph