An X-band IMPATT diode power amplifier for pulsed radar systems
Abstract
The theoretical and experimental development of a 1 kW peak/250W average power output, 30 dB gain amplifier is described. The amplifier consists of driver, intermediate power amplifier, and final power amplifier stages. The power output requirements of each stage are met by combining the output powers of silicon double-drift IMPATT diodes which have been designed for pulsed operation at X-band. Each diode develops 14 W peak power and 3 W average power. As many as 30 IMPATT diodes have been integrated in a single circular cylindrical resonant cavity. Recent development of high efficiency circular cylindrical resonant cavity techniques have permitted construction of high capacity combiners.
- Publication:
-
NAECON 1977; Proceedings of the National Aerospace and Electronics Conference
- Pub Date:
- 1977
- Bibcode:
- 1977naec.conf..373M
- Keywords:
-
- Avalanche Diodes;
- Microwave Amplifiers;
- Power Amplifiers;
- Pulse Radar;
- Radar Equipment;
- Cavity Resonators;
- Performance Tests;
- Power Gain;
- Electronics and Electrical Engineering