MM and T program for the establishment of production techniques for high power bulk semiconductor limiters

X-band bulk limiters of 5 mils in thickness were fabricated using high resistivity silicon of p-type uncompensated orientation Hughes material. These bulk limiters exhibit 3 db bandwidth of 1.05 GHz and power handling capability of 10 to 15 kW at recovery time of 3 to 5 microsec. During the fabrication phase, it was further found that Hughes material etches rougher, suggesting higher dislocation density. RF testing of bulk limiters at 1 and 3 microsecond pulse widths showed that pulse energy determines the heating and recovery time. A new microwave circuit was studied to improve the low-level RF performance of the bulk limiter and diode clean-up limiter.