Analysis of semiconductor structures by nuclear and electrical techniques
Abstract
MeV backscattering spectrometry and X-ray diffraction are used to investigate the behavior of sputter-deposited Ti-W mixed films on Si Substrates. During vacuum anneals at temperatures of 700 C for several hours, the metallization layer reacts with the substrate. Backscattering analysis shows that the resulting compound layer is uniform in composition and contains Ti, W and Si. The Ti:W ratio in the compound corresponds to that of the deposited metal film. X-ray analyses with Read and Guinier cameras reveal the presence of the ternary Ti(x)W(1-x)Si2 compound. Its composition is unaffected by oxygen contamination during anneal, but the reaction rate is affected. The rate measured on samples with about 15% oxygen contamination is linear, of the order of 0.5 A/sec at 725 C, and depends on the crystallographic orientation of the substrate and the d-c bias during sputter deposition of the Ti-W film.
- Publication:
-
California Instute of Technology Technical Report
- Pub Date:
- January 1977
- Bibcode:
- 1977cit..rept.....H
- Keywords:
-
- Metallizing;
- Microstructure;
- Semiconductor Devices;
- Silicon;
- Structural Analysis;
- Aluminum;
- Chromium;
- Palladium;
- Sputtering;
- Thin Films;
- Titanium;
- Tungsten;
- Electronics and Electrical Engineering