Techniques for hyperabrupt impurity profiles
Abstract
Testing and optimizing new technologies for diode development and manufacturing were investigated. The following experiments were surveyed and evaluated by computer analysis: (1) analysis of impurity profile; (2) analysis of capacitance-voltage relationship; (3) optimization of AM varactors; and (4) manufacture of hyperabrupt structures. Furthermore a study on the comparison of B2H6 and BN-diffusion techniques for p(+)-doping was performed. The implantation of phosphorus was introduced for n(+)-doping. Arsenic substrates with resistivity less than 5 microohms cm were tested. Hyperabrupt structures of the p(+)n(+)nn(+) type were realized with a maximum capacitance variation of 7, when varying the voltage between 3 V and 25 V. A computer program was written for analyzing the doping-profile and determination of resulting vs. voltage-characteristics.
- Publication:
-
Final Report AEG-Telefunken
- Pub Date:
- December 1977
- Bibcode:
- 1977aegt.rept.....C
- Keywords:
-
- Diodes;
- Impurities;
- Silicon;
- Capacitance;
- Diffusion;
- Ion Implantation;
- Electronics and Electrical Engineering