Device model for FETSIM circuit simulation program
Abstract
A description of the MOS transistor used in the FETSIM analysis program is presented. CMOS/SOS device parameters are included. Typical device mobilities are given as well as the empirically determined constants necessary to model second-order effect conductance variations due to gate voltage and saturated drain voltage.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- March 1977
- Bibcode:
- 1977STIN...7932465R
- Keywords:
-
- Circuit Diagrams;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Systems Engineering;
- Analog Circuits;
- Gates (Circuits);
- Signal Analysis;
- Sos (Semiconductors);
- Space Charge;
- Electronics and Electrical Engineering