Large scale integrated MOS circuits with small dimensions
Abstract
It is shown that the integration level of MOS-circuits has increased. This integration level is characterized by the number of components on a chip. The integration level can be increased if the structural dimensions are reduced or new circuit elements are employed which use fewer components for the same function. In order to follow and determine the tendency toward a higher integration level several solutions are presented. Examples for such solutions are the Al-gate-transistors with channel length of 1.25 micrometers, or the new memory concept which uses an MOS-transmission-line as bit-line and makes possible an integration level of 3400 bit/mm2 by 5 micrometer dimensions. It is demonstrated that with a new single-transistor memory cell in Al-gate technology an integration level of 6000 bit/mm2 by 2.5 micrometer dimensions can be achieved.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- December 1977
- Bibcode:
- 1977STIN...7918268H
- Keywords:
-
- Integrated Circuits;
- Large Scale Integration;
- Metal Oxide Semiconductors;
- Transmission Lines;
- Aluminum;
- Chips (Memory Devices);
- Gates (Circuits);
- Transistors;
- Electronics and Electrical Engineering