Electron Bombarded Semiconductor Charge Coupled Device (EBS-CCD) camera tube with GaAs photocathode proximity focused diode
Abstract
This final report describes design, development and fabrication of proximity focused imaging photodiodes known as electron bombarded semiconductor-charge coupled device (EBS-CCD) camera tubes. These ultra high vacuum devices consist of a flat gallium arsenide (GaAs) semitransparent photocathode (one of a class of III-V photocathodes) and a thinned-back charge coupled device (CCD) operated as an intensified charge coupled device (ICCD) in close proximity to each other.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- November 1977
- Bibcode:
- 1977STIN...7830528S
- Keywords:
-
- Camera Tubes;
- Charge Coupled Devices;
- Gallium Arsenides;
- Photocathodes;
- Electron Bombardment;
- Image Intensifiers;
- Photodiodes;
- Semiconductor Devices;
- Electronics and Electrical Engineering