Analysis of the frequency modulation of double heterostructure junction lasers
Abstract
The use of ultrasonic waves to frequency modulate double heterostructure lasers is discussed. The additional degree of freedom provided by the choice of the active layer thickness permits optimization of the modulation bandwidth. For GaAs double heterostructure lasers, an active region thickness of 0.26 micron yields a bandwidth of about 8 GHz. The orientation of the junction plane is also taken into consideration in optimizing bandwidth.
- Publication:
-
Revista Brasileira de Fisica
- Pub Date:
- December 1977
- Bibcode:
- 1977RBrFi...7..569R
- Keywords:
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- Frequency Modulation;
- Laser Outputs;
- Semiconductor Junctions;
- Semiconductor Lasers;
- Ultrasonic Light Modulation;
- Gallium Arsenide Lasers;
- Laser Cavities;
- Permittivity;
- Sound Waves;
- Lasers and Masers