Microwave-biased photoconductivity studies using a microwave integrated circuit
Abstract
A sensitive microwave bridge optimized for photoconductivity measurements was developed. The novel element of the bridge is a microwave integrated circuit. The sensitivity of the bridge is such that attenuation changes of .0001 db can be detected, and measurements can be performed over a temperature range of 100 to -35 K. In addition to microwave exeriments dc measurements can be performed under the same conditions. Photoconductivity measurements were performed at 10 GHz on single crystals CdS platelets. Primary difference between the results were a higher conductivity, much lower optical quenching, and faster microwave photoconductivity pulse response. These differences were explained by identifying three different regions in the samples: the hulk and two surface-contact regions.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1977
- Bibcode:
- 1977PhDT........61W
- Keywords:
-
- Cadmium Sulfides;
- Integrated Circuits;
- Microwave Equipment;
- Photoconductivity;
- Gallium Arsenides;
- Photoconductors;
- Single Crystals;
- Electronics and Electrical Engineering