Radiation hardened CMOS
Abstract
A description is presented of complementary metal oxide semiconductors (CMOS), comparing their structures to those of bipolar devices. The CMOS transistor structure is reviewed, noting the combination of p-channel and n-channel systems, and the modes available. The impacts of ionizing radiation on CMOS transistors is discussed in terms of the gate structures in both p-channel and n-channel devices. Performance characteristics are outlined along with the results of hardness assurance and reliability tests.
- Publication:
-
Military Electronics Countermeasures
- Pub Date:
- November 1977
- Bibcode:
- 1977MiElC...3...42L
- Keywords:
-
- Circuit Protection;
- Cmos;
- Electronic Equipment Tests;
- Radiation Hardening;
- Transistor Circuits;
- Avionics;
- Bipolar Transistors;
- Spacecraft Electronic Equipment;
- Electronics and Electrical Engineering