Thin silicon ion-implanted p-i-n photodiodes

Thin (6 micron) thick Si has been ion implanted to fabricate a p-i-n photodiode with an overall rise time probably better than 80 ps. The narrow depletion region gives short transit times, and the shallow ion-implanted junctions lead to minimal amounts of minority carrier storage, thus eliminating any slow tail to the voltage-output response to a step change of light input.