Radiation Hardening of CMOS Technologies - AN Overview
Abstract
The current status of four technologies for manufacturing radiation-hardened complementary metal-oxide-semiconductor integrated circuits is presented. The technologies include both aluminum-gate and silicon-gate CMOS structures formed on bulk-silicon and on silicon-on-sapphire (SOS) substrates. The hardness levels achieved on large-scale integrated circuits fabricated in each of these technologies is given. In addition some historical background is included.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1977
- DOI:
- 10.1109/TNS.1977.4329161
- Bibcode:
- 1977ITNS...24.2043B
- Keywords:
-
- Cmos;
- Fabrication;
- Large Scale Integration;
- Radiation Hardening;
- Technology Assessment;
- Circuit Reliability;
- Dielectrics;
- Gates (Circuits);
- Production Engineering;
- Radiation Effects;
- Silicon;
- Sos (Semiconductors);
- Substrates;
- Electronics and Electrical Engineering