Dependency of the highest harmonic oscillation frequency on junction diameter of IMPATT diodes
Abstract
The effect of series resistance and junction capacitance on the highfrequency limit of IMPATT diode operation is studied with a Readtype smallsignal theory, and is confirmed experimentally. Oscillation frequencies from 30 to 400 GHz have been measured with Si p(+)nn(+) abrupt junction diodes with a depletion layer width of 0.2 microns. The highest oscillation frequency increases as the junction diameter is decreased, owing to reduced junction capacitance and increased biascurrent density. The highest oscillation frequency observed is 423 GHz, which is obtained in the fifth harmonic mode with a diode of 16micron junction diameter. Fundamental oscillation frequency is found to depend strongly on dc biascurrent density, and to be close to the avalanche frequency of the smallsignal theory.
 Publication:

IEEE Transactions on Electron Devices
 Pub Date:
 December 1977
 DOI:
 10.1109/TED.1977.19007
 Bibcode:
 1977ITED...24.1323O
 Keywords:

 Avalanche Diodes;
 Frequency Measurement;
 Harmonic Oscillation;
 Microwave Oscillators;
 PN Junctions;
 Submillimeter Waves;
 Capacitance;
 Current Density;
 Design Analysis;
 Diameters;
 Electrical Resistance;
 Negative Resistance Devices;
 Resonant Frequencies;
 Silicon Junctions;
 Electronics and Electrical Engineering