Dependency of the highest harmonic oscillation frequency on junction diameter of IMPATT diodes
Abstract
The effect of series resistance and junction capacitance on the high-frequency limit of IMPATT diode operation is studied with a Read-type small-signal theory, and is confirmed experimentally. Oscillation frequencies from 30 to 400 GHz have been measured with Si p(+)-n-n(+) abrupt junction diodes with a depletion layer width of 0.2 microns. The highest oscillation frequency increases as the junction diameter is decreased, owing to reduced junction capacitance and increased bias-current density. The highest oscillation frequency observed is 423 GHz, which is obtained in the fifth harmonic mode with a diode of 16-micron junction diameter. Fundamental oscillation frequency is found to depend strongly on dc bias-current density, and to be close to the avalanche frequency of the small-signal theory.
- Publication:
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IEEE Transactions on Electron Devices
- Pub Date:
- December 1977
- DOI:
- Bibcode:
- 1977ITED...24.1323O
- Keywords:
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- Avalanche Diodes;
- Frequency Measurement;
- Harmonic Oscillation;
- Microwave Oscillators;
- P-N Junctions;
- Submillimeter Waves;
- Capacitance;
- Current Density;
- Design Analysis;
- Diameters;
- Electrical Resistance;
- Negative Resistance Devices;
- Resonant Frequencies;
- Silicon Junctions;
- Electronics and Electrical Engineering