Interaction of microwave biased n-GaAs and 337 micron radiation
Abstract
High-purity epitaxial GaAs, cooled to liquid helium temperatures, is impact-ionized with pulsed microwave radiation. The transmission of 337 micron light through the GaAs increases by as much as 30% during application of the microwave pulse. The power dissipated in the GaAs is typically 200 mW, an order of magnitude less than that dissipated in the Ge impact ionization modulator reported by Melngailis and Tannenwald (1969).
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- June 1977
- DOI:
- 10.1109/JQE.1977.1069349
- Bibcode:
- 1977IJQE...13..409E
- Keywords:
-
- Electromagnetic Interactions;
- Far Infrared Radiation;
- Gallium Arsenides;
- N-Type Semiconductors;
- Pulsed Radiation;
- Submillimeter Waves;
- Energy Dissipation;
- Epitaxy;
- Germanium;
- Ion Implantation;
- Light Transmission;
- Liquid Helium;
- Low Temperature Environments;
- Maser Outputs;
- Solid-State Physics