Present and future of semiconductor memory technology

A survey is presented of modern read/write memory modules and of dynamic MOS random access memories. Predictions are made as to future improvements in memory capacity and manufacturing costs, particularly through structural reductions and vertical integration. Modern static memory modules are considered along with nonvolatile, reprogrammable memories which use floating gate or MNOS technology. The standardized cell surface is discussed as an aid in evaluating different types of memories, including those based on CCD and static module technology.