The current state and development trends of semiconductors for generation and amplification of microwaves
Abstract
The article surveys the current state of microwave oscillator and amplifier components, with mention of current market conditions and ranges of microwave applications of various semiconductor devices. Gunn diode devices, transferred electron devices in general, IMPATT and TRAPATT avalanche diode devices, LSA (limited space-charge accumulation) systems, precision impurity and doping control, liquid-phase epitaxial layer technology, and ion implantation are discussed. The potential advantages of InP devices, particularly three transfer levels in the conduction band, are compared to Si and GaAs technology, and a bright future is seen for InP technology.
- Publication:
-
Elektronika
- Pub Date:
- 1977
- Bibcode:
- 1977Elek...18..225K
- Keywords:
-
- Microwave Amplifiers;
- Microwave Oscillators;
- Semiconductor Devices;
- Avalanche Diodes;
- Charge Transfer;
- Gallium Arsenides;
- Gunn Diodes;
- Indium Phosphides;
- Silicon;
- Technology Assessment;
- Electronics and Electrical Engineering