New avalanche-injection-controlled switch

The basic principles of operation of a new three-terminal switching device based on the avalanche injection effect are described. The basic idea involved in this controlled switch is that one can cause hole accumulation near the cathode by injecting holes through a third terminal. As a result, the field grows at the anode and the device also goes above threshold if the applied voltage is much lower than that needed to generate the same hole current only by internal multiplication. A first-approximation description is given of the phenomena involved, which helps understand the operating principles. The proposed device is verified on laboratory samples having a silicon n(plus)-n-n(plus) structure and with the third terminal obtained by a point-contact diode formed near the cathode. The switching time is found to be in the nanosecond range and is limited by the circuitry used to measure it.