High-power 10%-tuning-bandwidth varactor-controlled IMPATT oscillator/amplifier
Abstract
A simple electronically tuned CW GaAs IMPATT/varactor-diode oscillator/amplifier circuit is described which can be tuned over a 10% bandwidth at mid-X-band frequencies at a power level greater than 0.5 W as an oscillator, and greater than 0.8 W at the 6 dB-gain level as a reflection amplifier. Unambiguous electronic tuning without power jumps, frequency hops or 'out-of-band' oscillations has been achieved by paying special attention to the circuit design.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1977
- DOI:
- 10.1049/el:19770132
- Bibcode:
- 1977ElL....13..179B
- Keywords:
-
- Avalanche Diodes;
- Gallium Arsenides;
- Microwave Amplifiers;
- Microwave Circuits;
- Microwave Oscillators;
- Varactor Diode Circuits;
- Bandwidth;
- Junction Diodes;
- Solid State Devices;
- Superhigh Frequencies;
- Tuning;
- Electronics and Electrical Engineering