Study of tin /IV/ oxide layers using the Moessbauer effect

The structure and some properties of a tin (IV) oxide layer on different substrates were studied using depth-selective Moessbauer spectroscopy in conjunction with electron diffraction and exoelectron emission methods. It is shown that a layer of tin (IV) oxide is obtained in the oxidation of the thin film (200-2000 A) of tin on beryllium. If the substrate is made out of glass, a mixture of tin (II) and (IV) oxides is obtained. Diffusion of silicon atoms into the tin (IV) oxide layers takes place upon heating (up to 650 C) the single crystal silicon wafer whose surface carries a tin (IV) oxide layer.