Analytic calculation of CID sensors
Abstract
A description is presented of a technique which makes it possible to obtain an estimate for an output signal of a charge injection device (CID) sensor in the case of various types of readout. The techniques considered are related to readout with integration on substrate capacitance, readout via substrate capacitance but with improved select circuitry, and readout via a charge amplifier. Each element of a CID sensor consists of two MOS capacitors. Attention is given to aspects of MOS capacitor operation, CID element design, the equivalent circuit of a simple CID sensor, and the side effects produced by a diffused region in the area of the interelectrode gap.
- Publication:
-
Archiv Elektronik und Uebertragungstechnik
- Pub Date:
- February 1977
- Bibcode:
- 1977ArElU..31...67K
- Keywords:
-
- Carrier Injection;
- Charge Transfer Devices;
- Image Transducers;
- Metal Oxide Semiconductors;
- Readout;
- Signal Analysis;
- Capacitance;
- Charge Coupled Devices;
- Charge Injection Devices;
- Dynamic Characteristics;
- Equivalent Circuits;
- Matrices (Circuits);
- Systems Analysis;
- Transmission Loss;
- Electronics and Electrical Engineering