Electron beam semiconductor S-band amplifier
Abstract
This report discusses results of an investigation leading to the development of a pulsed 1 kilowatt peak power (EBS) RF amplifier operating at 3.2 GHz. The feasibility of building pulsed power (EBS) amplifiers in the 3 GHz frequency range was demonstrated. Techniques have been worked out for designing and constructing semiconductor diodes capable of maintaining their electrical characteristics under high voltage beam bombardment and high peak current conditions. A resonator and coupling system for S- Band operation has been devised which provides the proper diode load impedance and RF output coupling to a 50 ohm transmission line. The meanderline deflection structure has been improved so that a 1 watt RF input signal is sufficient to provide full beam deflection for optimum diode current modulation.
- Publication:
-
Final Report
- Pub Date:
- January 1976
- Bibcode:
- 1976wjc..rept.....R
- Keywords:
-
- Electron Guns;
- Gunn Diodes;
- Microwave Amplifiers;
- Traveling Wave Tubes;
- Electron Beams;
- Impedance Matching;
- Pulse Amplitude;
- Semiconductor Devices;
- Electronics and Electrical Engineering