Solid state millimeter wave sources
Abstract
State-of-art characteristics and related package and circuit design requirements for millimeter wave solid state sources are reviewed. Gunn devices are useful to 100 GHz for fixed source applications. For wideband voltage controlled oscillator applications, the frequency limit is closer to 60 GHz. IMPATTs have potential for use to 300 GHz, and wideband operation is feasible to beyond 100 GHz. The nature of future improvements and the implications of present design of these devices are discussed. In the near future, a three-terminal device, the Schottky barrier (metal) gate field effect transistor (MESFET) is expected to be competitive for some applications in the lower portion of the millimeter range.
- Publication:
-
Western Electronic Show and Convention
- Pub Date:
- 1976
- Bibcode:
- 1976wesc.proc...29W
- Keywords:
-
- Avalanche Diodes;
- Field Effect Transistors;
- Gunn Diodes;
- Microwave Oscillators;
- Millimeter Waves;
- Solid State Devices;
- Broadband;
- Electronic Packaging;
- Heat Sinks;
- Network Synthesis;
- Schottky Diodes;
- Silicon Transistors;
- Electronics and Electrical Engineering