Effect of silicon detector physics on radiometric applications
Abstract
The parameters that affect the spectral response of a silicon photodetector, operating in an unbiased photovoltaic mode in the visible and near infrared are discussed. These parameters include spatial uniformity, temperature coefficient, linearity, angular response, temporal response and polarization. Responsivity enhancement is studied as a function of exposure time to UV radiation at 254 and 364 nm, and the UV induced response enhancement of a silicon photodiode is studied as a function of wavelength. Attention is also given to carrier losses due to recombinations of holes and electrons before they have a chance to be separated at the junction and contribute to the measured current.
- Publication:
-
Electro-optical Systems Design Conference and International Laser Exposition
- Pub Date:
- 1976
- Bibcode:
- 1976eosd.conf...75S
- Keywords:
-
- Optical Measurement;
- Photometers;
- Radiometers;
- Silicon Radiation Detectors;
- Near Infrared Radiation;
- Spectral Resolution;
- Ultraviolet Radiation;
- Instrumentation and Photography