Development of processes for simultaneous diffusion of several dopant junction or doping elements for power devices
Abstract
Dopant profiles with variable characteristic data were diffused using open gallium diffusion, in which the dopant concentration was controlled by changes in the gas mixture. Two methods are described by which the dopant reaction can be controlled. Diode structures were simultaneously diffused using liquid dopants (silica films). Diodes for power applications were successfully fabricated using this method, with large penetration depths and, at the same time, with high surface concentrations at low costs and high yields. The manufacturing of lateral dopant structures for power devices, using the dopant liquids available at present, is not yet feasible since the oxide films do not mask sufficiently for the relatively long diffusion times.
- Publication:
-
Final Report Brown
- Pub Date:
- July 1976
- Bibcode:
- 1976bbuc.reptR....B
- Keywords:
-
- Additives;
- Doped Crystals;
- Electric Power Supplies;
- P-N Junctions;
- Surface Diffusion;
- Gallium;
- Gas Mixtures;
- Junction Diodes;
- Penetration;
- Silicon Dioxide;
- Vapor Deposition;
- Electronics and Electrical Engineering