Development of new active semiconductor surface passivation technologies for high blocking voltage power devices
Abstract
A technique is described, by which fully diffused small thyristors with a 750 V blocking voltage were passivated through glazing with a lead-alumino-silicate glass powder prior to their separation into discrete chips. Metallization then ensued using chemically deposited nickel, and the specially shaped terminal contacts were soldered using a conveyer-belt oven. The maximum blocking voltage for a sine-wave application with this glass passivation technology was approximately 1200 V. The temperature limit for application appears to depend more on the quality of the surrounding assembly materials than on the start of ionic conductivity in the passivating glass. Passivation experiments with high molecular polymers showed that with special treatment junction coating resin DCR 6102 was suitable for high power devices.
- Publication:
-
Final Report Brown
- Pub Date:
- July 1976
- Bibcode:
- 1976bbuc.reptQ....B
- Keywords:
-
- High Voltages;
- Passivity;
- Surface Finishing;
- Thyristors;
- Chips;
- Nickel;
- Silica Glass;
- Silicon;
- Silicon Polymers;
- Temperature Effects;
- Vapor Deposition;
- Electronics and Electrical Engineering