An equivalent circuit diagram for Gunn elements with Schottky contact
Abstract
In the derivation of the equivalent circuit diagram, it is assumed that the thickness of the depletion layer near the Schottky barrier is independent of the position. Diffusion effects and the influence of the boundary regions are neglected. Attention is given to the current density equation, the continuity equation, the Poisson equation, and the relations for the cathode and anode current. The derived equivalent circuit diagram is used in the analysis of a storage element with novel characteristics.
 Publication:

Wissenschaftliche Zeitschrift
 Pub Date:
 1976
 Bibcode:
 1976WisZe..25..443F
 Keywords:

 Computer Storage Devices;
 Equivalent Circuits;
 Gunn Diodes;
 Schottky Diodes;
 Capacitors;
 Circuit Diagrams;
 Continuity Equation;
 Current Density;
 Electric Field Strength;
 Optimization;
 Poisson Equation;
 Electronics and Electrical Engineering