The electrical properties of sputtered gallium arsenide films
Abstract
As a consequence of the difficulty in making measurements on planar GaAs samples this study concentrated on metal-GaAs-metal (Al, Mg, Mn) sandwich structures. The alternating current and direct current measurements made on these structures are described, and the results are presented. The objective was to determine the electrical properties of highly disordered films of GaAs deposited by sputtering with and without co-sputtering of p-type and n-type dopants. The ac analysis included a measure of the impedance, magnitude and phase angle of these structures over a wide range of frequencies and temperatures. The results indicated that the model which describes these structures is a series combination of two parallel RC networks. The physical model which would result in this equivalent circuit model is that of a leaky Schottky barrier in series with 'bulk'. As a check on this model the equivalent parallel capacitance of these structures was measured at high and low frequency and over a temperature range, and these results verified this conclusion.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- October 1976
- Bibcode:
- 1976STIN...7724406S
- Keywords:
-
- Gallium Arsenides;
- Semiconducting Films;
- Sputtering;
- Thin Films;
- Additives;
- Alternating Current;
- Direct Current;
- Electrical Properties;
- Frequencies;
- Schottky Diodes;
- Temperature;
- Electronics and Electrical Engineering