Parasitic SCR between a Schottky diode and an adjacent transistor
Abstract
A Schottky diode and an adjacent transistor in integrated circuits may show parasitic silicon controlled rectifier (SCR) latching. This parasitic effect must be taken into account by circuit designers. If the SCR latches, an undesirable electrical short is formed between the Schottky diode and the emitter of the transistor. In this paper the conditions are investigated under which the parasitic SCR can switch. Experimental data are presented which show the validity of the theoretical considerations. Recommendations are given on how to suppress parasitic SCR latching.
- Publication:
-
Solid State Electronics
- Pub Date:
- August 1976
- DOI:
- 10.1016/0038-1101(76)90147-7
- Bibcode:
- 1976SSEle..19..711K
- Keywords:
-
- Bipolar Transistors;
- Electrical Faults;
- Integrated Circuits;
- Rectifiers;
- Schottky Diodes;
- Silicon Junctions;
- Current Density;
- Epitaxy;
- Equivalent Circuits;
- Junction Transistors;
- N-P-N Junctions;
- P-N-P Junctions;
- Short Circuits;
- Electronics and Electrical Engineering