Double-diffused IMPATT diodes without substrate for X-band frequencies
Abstract
The fabrication of double-diffused IMPATT diodes without substrate is described. The advantages of these diodes are shown in comparison to conventional Impatt diodes having an epitaxial nn+-transition. The double-diffused diodes deliver higher output power and efficiency. Saturation of the efficiency occurs at higher d.c.-current levels.
- Publication:
-
Solid State Electronics
- Pub Date:
- May 1976
- DOI:
- 10.1016/0038-1101(76)90081-2
- Bibcode:
- 1976SSEle..19..419F
- Keywords:
-
- Avalanche Diodes;
- Microwave Amplifiers;
- Silicon Junctions;
- Superhigh Frequencies;
- Epitaxy;
- Fabrication;
- Semiconductor Junctions;
- Substrates;
- Electronics and Electrical Engineering