Discharge of MNOS structures at elevated temperatures
Abstract
The discharge behavior of MNOS structures without voltage applied, is investigated at temperatures from 25 to 300°C, for times from 10 min to about 1 week. The observed discharge behavior is explained by a theoretical model, including two discharge processes. The two processes are direct tunneling from traps and thermal excitation of these traps. It is shown that static retention times of more than 10 yr at 85°C is attainable. Also, discharge with voltage applied is investigated and shown to agree with the model when the voltage is small enough.
- Publication:
-
Solid State Electronics
- Pub Date:
- March 1976
- DOI:
- 10.1016/0038-1101(76)90166-0
- Bibcode:
- 1976SSEle..19..221L
- Keywords:
-
- Electric Discharges;
- Electron Tunneling;
- Metal-Nitride-Oxide-Silicon;
- Temperature Effects;
- Band Structure Of Solids;
- Energy Distribution;
- Fabrication;
- High Temperature Tests;
- Mathematical Models;
- Retention;
- Thermal Stability;
- Trapped Particles;
- Electronics and Electrical Engineering