The characteristics and applications of a V-shaped notched-channel field-effect transistor (VFET)
Abstract
A new junction field-effect transistor (FET) structure with a V-shaped notched channel fabricated by preferential etching of <100> silicon is described. This transistor (VFET) exhibits a higher maximum transconductance and a lower turn-on resistance than a conventional FET with the same surface dimensions. The fabrication procedures for a p-n junction gate as well as a Schottky barrier gate device are outlined. A first order model for the VFET is discussed. Experimental results are presented and are shown to be in agreement with the predictions of the model. The advantages of the VFET (with Schottky barrier and/or p-n junction gates) for analog switching, microwave frequency amplification and integrated circuits are discussed. Modifications of the basic VFET structure to obtain other useful functions are also described.
- Publication:
-
Solid State Electronics
- Pub Date:
- February 1976
- DOI:
- 10.1016/0038-1101(76)90096-4
- Bibcode:
- 1976SSEle..19..159M
- Keywords:
-
- Field Effect Transistors;
- Junction Transistors;
- P-N Junctions;
- Schottky Diodes;
- Silicon Transistors;
- Volt-Ampere Characteristics;
- Etching;
- Fabrication;
- Gates (Circuits);
- Ion Implantation;
- Notches;
- Performance Tests;
- Electronics and Electrical Engineering