The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes
Abstract
The properties of d.c. sputtered molybdenum-silicon Schottky diodes are described. Although it is possible to produce near ideal characteristics when a low sputtering voltage is used for a short time, increased voltage and time lead to significant deviation from the ideal. A model is proposed which is capable of explaining most features of the observed C-V and I-V characteristics. This model assumes that sputtering damage causes donor-like traps to be created close to the semiconductor surface. It is found that an exponential distribution of traps with characteristic length in the range 10-100 A and an energy level of 0·43 eV below the conduction band is sufficient to account for the observed characteristics. The modification to the I-V characteristics is due to tunnelling through the top of the Schottky barrier where it is narrowed by the presence of the excess trapped charge.
- Publication:
-
Solid State Electronics
- Pub Date:
- January 1976
- DOI:
- 10.1016/0038-1101(76)90132-5
- Bibcode:
- 1976SSEle..19...47M
- Keywords:
-
- Metal Films;
- Schottky Diodes;
- Silicon Junctions;
- Sputtering;
- Charge Distribution;
- Fermi Surfaces;
- Molybdenum;
- Trapping;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering