Contact resistance of metal-silicon systems at microwave frequencies
Abstract
Contact measurements taken on metal-silicon devices of realized devices and under normal operating conditions, using the resonant-cavity technique, are reported. Measurements were taken at UHF and L-band frequencies. Contact resistances were measured and correlated with the performance of p-i-n, varactor, and IMPATT diode metal-silicon devices. The systems studied included: Au-Cr-Si, Au-Ti-Si, Au-Pd-Cr-Si, and Au-Cr-Pd2Si-Si. Standard microwave Q-measurement techniques and p(+)nn(+) and p(+)pn(+) multilayer all-epitaxially grown Si diodes were employed under high-field reverse-bias conditions. The Q of the packaged diode was calculated using the Q of the empty RF coaxial cavity at the reference frequency. The importance of contact resistance as a figure of merit for evaluating the performance of the three devices tested is assessed.
- Publication:
-
RCA Review
- Pub Date:
- March 1976
- Bibcode:
- 1976RCARv..37..107C
- Keywords:
-
- Cavity Resonators;
- Contact Resistance;
- Metal Surfaces;
- Microwave Circuits;
- Q Factors;
- Silicon Junctions;
- Avalanche Diodes;
- Electrical Measurement;
- Epitaxy;
- P-I-N Junctions;
- Performance Tests;
- Ultrahigh Frequencies;
- Varactor Diodes;
- Electronics and Electrical Engineering