Study of the behavior of p-n semiconductor junctions in avalanche multiplication regime

A theory of multiplication by avalanching in p-n junctions is developed, which is used to establish a simple method of determining approximately the multiplication factors given by the ionization integrals. The results are applied to a study of avalanche diodes, with special attention given to conditions of strong multiplication in these devices. Basic results are a characterization of the photodiode in case of premature punch-through, and a prediction of gain when the wavelength of the incident photons varies within very large limits. One chapter is devoted to studying Schottky SiPt-SiN diodes at punch-through. Punch-through and multiplication behavior in Schottky diodes and in p(plus)-n junctions made on the same substrate are compared, whereby considerable differences between these two structures at strong multiplications are revealed. Information is also given on new experimental characterization methods.