Study of the behavior of pn semiconductor junctions in avalanche multiplication regime
Abstract
A theory of multiplication by avalanching in pn junctions is developed, which is used to establish a simple method of determining approximately the multiplication factors given by the ionization integrals. The results are applied to a study of avalanche diodes, with special attention given to conditions of strong multiplication in these devices. Basic results are a characterization of the photodiode in case of premature punchthrough, and a prediction of gain when the wavelength of the incident photons varies within very large limits. One chapter is devoted to studying Schottky SiPtSiN diodes at punchthrough. Punchthrough and multiplication behavior in Schottky diodes and in p(plus)n junctions made on the same substrate are compared, whereby considerable differences between these two structures at strong multiplications are revealed. Information is also given on new experimental characterization methods.
 Publication:

Ph.D. Thesis
 Pub Date:
 July 1976
 Bibcode:
 1976PhDT........55L
 Keywords:

 Avalanche Diodes;
 Carrier Injection;
 Ionization;
 PN Junctions;
 Photodiodes;
 Schottky Diodes;
 Holes (Electron Deficiencies);
 Ion Production Rates;
 Microplasmas;
 Multiplication;
 Optical Scanners;
 Photoionization;
 Silicon Junctions;
 Space Charge;
 Electronics and Electrical Engineering