N-type switching of semiconductors immersed in cryogenic liquids
Abstract
The I-V characteristics of semiconductors immersed in cryogenic liquids were studied both under dc and pulsed conditions. Switching parameters were found both experimentally and theoretically. It was found that under pulsed conditions the threshold switching power is considerably decreased. It was shown that this thermal N-type switching has been repeatedly misinterpreted as an electronic mechanism, in particular to field induced (enhanced) trapping in Si counterdoped with deep double impurities (S, Zn and Co). It seems very unlikely that field induced trapping can generate N-type switching in silicon at 77 K.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- October 1976
- Bibcode:
- 1976PhDT........27D
- Keywords:
-
- Cryogenic Fluids;
- Semiconductors (Materials);
- Switching;
- Direct Current;
- Electric Current;
- Electric Potential;
- Electric Pulses;
- Silicon;
- Submerging;
- Trapping;
- Solid-State Physics