Electron-beam-excited stimulated emission from InAs
Abstract
The results of an investigation of the radiative characteristics of an electron-beam-excited indium arsenide laser are reported. The cathodoluminescence of epitaxial films and bulk crystals of InAs with carrier densities in the range n = 5 x 10 to the 15th to 10 to the 18th/cu cm and p = 6 x 10 to the 16th to 1.5 x 10 to the 18th/cu cm was examined. Stimulated emission was obtained when epitaxial n-type films with an electron density in the range (2-6) x 10 to the 16th/cu cm were excited by a 50 keV electron beam at temperatures 85-200 K. The maximum stimulated radiation power was 22 W.
- Publication:
-
Kvantovaia Elektronika Moscow
- Pub Date:
- July 1976
- Bibcode:
- 1976KvanE...3.1601G
- Keywords:
-
- Electroluminescence;
- Electron Beams;
- Electron Pumping;
- Indium Arsenides;
- Semiconductor Lasers;
- Stimulated Emission;
- Cathodes;
- Crystal Optics;
- Electron Density (Concentration);
- Epitaxy;
- Laser Outputs;
- N-Type Semiconductors;
- Semiconducting Films;
- Thin Films;
- Lasers and Masers